• Part: MJE703G
  • Description: Plastic Darlington Complementary Silicon Power Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 125.95 KB
Download MJE703G Datasheet PDF
onsemi
MJE703G
Features - High DC Current Gain - h FE = 2000 (Typ) @ IC = 2.0 Adc - Monolithic Construction with Built- in Base- Emitter Resistors to Limit Leakage - Multiplication - Choice of Packages - MJE700 and MJE800 Series - These Devices are Pb- Free and are Ro HS pliant- MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCEO 60 80 Vdc Collector- Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCB Vdc 60 Emitter- Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 4.0 Adc IB 0.1 Adc PD 40 W 0.32 m W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 55 to +150 _C Stresses...