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MJW1302A - PNP Silicon Power Bipolar Transistors

Download the MJW1302A datasheet PDF. This datasheet also covers the MJW3281A variant, as both devices belong to the same pnp silicon power bipolar transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Designed for 100 W Audio Frequency.
  • Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A.
  • Low Harmonic Distortion.
  • High Safe Operation Area.
  • 1 A/100 V @ 1 Second.
  • High fT.
  • 30 MHz Typical.
  • Pb.
  • Free Packages are Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJW3281A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJW1302A
Manufacturer onsemi
File Size 190.10 KB
Description PNP Silicon Power Bipolar Transistors
Datasheet download datasheet MJW1302A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Complementary NPN-PNP Silicon Power Bipolar Transistors MJW3281A (NPN) MJW1302A (PNP) The MJW3281A and MJW1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Features  Designed for 100 W Audio Frequency  Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A  Low Harmonic Distortion  High Safe Operation Area − 1 A/100 V @ 1 Second  High fT − 30 MHz Typical  Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) VCEO VCBO VEBO VCEX IC 230 Vdc 230 Vdc 5.