MMBD101LT1G - Schottky Barrier Diodes

onsemi

Key Features

Low Noise Figure.
6.0 dB Typ @ 1.0 GHz.
Very Low Capacitance.
Less Than 1.0 pF.
High Forward Conductance.
0.5 V (Typ) @ IF = 10 mA.
These Devices are Pb.
Free and are RoHS Compliant.

MMBD101LT1G schottky barrier diodes by onsemi - Datasheet Preview

Datasheet Details

Part number	MMBD101LT1G
Manufacturer	onsemi
File Size	216.60 KB
Description	Schottky Barrier Diodes
Datasheet	MMBD101LT1G Datasheet

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Full PDF Text Transcription (Reference)

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Schottky Barrier Diodes MBD101G, MMBD101LT1G Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features  Low Noise Figure − 6.0 dB Typ @ 1.0 GHz  Very Low Capacitance − Less Than 1.0 pF  High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA  These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR Forward Power Dissipation PF TA = 25C MBD101 MMBD101LT1 7.0 V 280 mW 225 Derate above 25C MBD101 MMBD101LT1 2.2 mW/C 1.