MMBD101LT1 - SILICON SCHOTTKY BARRIER DIODES

Key Features

Low Noise Figure.
6.0 dB Typ @ 1.0 GHz.
Very Low Capacitance.
Less Than 1.0 pF.
High Forward Conductance.
0.5 V (Typ) @ IF = 10 mA.
Pb.
Free Packages are Available.

MMBD101LT1 silicon schottky barrier diodes by ON - Datasheet Preview

Datasheet Details

Part number	MMBD101LT1
Manufacturer	ON
File Size	55.69 KB
Description	SILICON SCHOTTKY BARRIER DIODES
Datasheet	MMBD101LT1 Datasheet

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Full PDF Text Transcription (Reference)

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MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Very Low Capacitance − Less Than 1.0 pF • High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Reverse Voltage Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 VR PF Value 7.0 280 225 Unit V mW Derate above 25°C MBD101 MMBD101LT1 2.2 mW/°C 1.