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N-Channel JFET
MMBFJ110
Features
• This Device is Designed for Digital Switching Applications where
Very Low On Resistance is Mandatory
• Sourced from Process 58 • This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2)
Symbol
Parameter
Value
Unit
VDG Drain−Gate Voltage
25
V
VGS Gate−Source Voltage
−25
V
IGF Forward Gate Current
10
mA
TJ
Junction Temperature
150
°C
TJ, TSTG Storage Temperature Range
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits.
MMBFJ110 Datasheet
