Datasheet4U Logo Datasheet4U.com

MMBT918LT1G - VHF/UHF Transistor

General Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

23 (TO 236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2 onsemi and are trademarks of Semiconduc

Key Features

  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBT918LT1 VHF/UHF Transistor Motorola
MMBT918LT1 VHF/UHF Transistor ON
MMBT918 Silicon NPN Transistor NTE
MMBT918 NPN RF Transistor Fairchild
MMBT918 VHF/UHF TRANSISTOR Motorola

Other Datasheets by onsemi

Part Number Description
MMBT2131T1 PNP Transistors
MMBT2131T1G PNP Transistors
MMBT2222AL General Purpose Transistors
MMBT2222AM3T5G NPN General Purpose Transistor
MMBT2222ATT1 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VHF/UHF Transistor MMBT918LT1G NPN Silicon Features  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, PD (Note 1) TA = 25C 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C RqJA PD 556 C/W 300 mW 2.