The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MMBT918
VHF/UHF NPN SILICON TRANSISTOR
VOLTAGE 15 Volts POWER 225 mWatts FEATURES
• NPN silicon • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram • Marking: R1B
ABSOLUTE RATINGS
PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER Total Device Dissipation (Note1)TA=25OC Derate above 25OC Thermal Resistance , Junction to Ambient Junction and Storage Temperature
Note 1: FR.4 = 70 x 60 x 1mm.
STAD-JUL.26.2006
Symbol VCEO VCBO VEBO IC
Value 15 30 3.0 50
Units V V V mA
Symbol PD RθJ A
TJ,TS TG
Value 225 1.8
556
-55 to 150
Units mW mW/O C
O C/W
OC
PAGE .
MMBT918 Datasheet
