MMDFS6N303
MMDFS6N303 is Power MOSFET manufactured by onsemi.
Features
- Power MOSFET with Low VF
- Lower ponent Placement and Inventory Costs along with
Board Space Savings
- Logic Level Gate Drive
- Can be Driven by Logic ICs
- Mounting Information for SO- 8 Package Provided
- Applications Information Provided
- R2 Suffix for Tape and Reel (2500 units/13″ reel)
- Marking: 6N303
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 1.0 MW) Gate- to- Source Voltage
- Continuous
Drain Current (Note 2)
- Continuous @ TA = 25°C
- Single Pulse (tp v 10 ms)
Total Power Dissipation @ TA = 25°C (Note 2)
Symbol VDSS VDGR VGS
ID IDM PD
Value 30 30 "20
6.0 30 2.0
Unit Vdc Vdc Vdc
Adc Apk Watts
Single Pulse Drain- to- Source Avalanche Energy
- Startin TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 m H, RG = 25 W
325 m J
1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max. http://onsemi.
6 AMPERES 30 VOLTS
RDS(on) = 35 m W VF = 0.42 Volts
N- Channel
SO- 8 CASE 751 STYLE 18
MARKING DIAGRAM
8 6N303...
