MMDFS6N303R2 Datasheet | onsemi

Features - Power MOSFET with Low VF - Lower ponent Placement and Inventory Costs along with Board Space Savings - Logic Level Gate Drive - Can be Driven by Logic ICs - Mounting Information for SO- 8 Package Provided - Applications Information Provided - R2 Suffix for Tape and Reel (2500 units/13″ reel) - Marking: 6N303 MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 MW) Gate- to- Source Voltage - Continuous Drain Current (Note 2) - Continuous @ TA = 25°C - Single Pulse (tp v 10 ms) Total Power Dissipation @ TA = 25°C (Note 2) Symbol VDSS VDGR VGS ID IDM PD Value 30 30 "20 6.0 30 2.0 Unit Vdc Vdc Vdc Adc Apk Watts Single Pulse Drain- to- Source Avalanche Energy - Startin TJ = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 m H, RG = 25 W 325 m J 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. http://onsemi. 6 AMPERES 30 VOLTS RDS(on) = 35 m W VF = 0.42 Volts N- Channel SO- 8 CASE 751 STYLE 18 MARKING DIAGRAM 8 6N303...