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MMSF3350 - Single N-Channel MOSFET

Key Features

  • igh switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs ha.

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Datasheet Details

Part number MMSF3350
Manufacturer onsemi
File Size 287.30 KB
Description Single N-Channel MOSFET
Datasheet download datasheet MMSF3350 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMSF3350 WaveFET™ HDTMOS™ Single N−Channel Field Effect Transistor Power Surface Mount Products WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.