MOC217M
Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high- density applications, and eliminate the need for through- the- board mounting.
Features
- Closely Matched Current Transfer Ratios Minimum BVCEO of 70 V
Guaranteed
- MOC205M, MOC206M, MOC207M
- Minimum BVCEO of 30 V Guaranteed
- MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
- Low LED Input Current Required for Easier Logic Interfacing
- MOC216M, MOC217M
- Convenient Plastic SOIC- 8 Surface Mountable Package Style, with
0.050” Lead Spacing
- Safety and Regulatory Approvals:
- UL1577, 2,500 VACRMS for 1 Minute
- DIN- EN/IEC60747- 5- 5, 565 V Peak Working Insulation Voltage
- These are Pb- Free Devices
Applications
- Feedback Control Circuits
- Interfacing and Coupling Systems of Different Potentials and
Impedances
- General Purpose Switching Circuits
- Monitor and...
