MOC212M Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high−density applications, and eliminate the need for through−the−board mounting.
MOC212M Key Features
- Closely Matched Current Transfer Ratios Minimum BVCEO of 70 V
- MOC205M, MOC206M, MOC207M
- Minimum BVCEO of 30 V Guaranteed
- MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
- Low LED Input Current Required for Easier Logic Interfacing
- MOC216M, MOC217M
- Safety and Regulatory Approvals
- UL1577, 2,500 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
- These are Pb-Free Devices