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MPSL51 Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO VCBO VEBO IC PD
PD
TJ, Tstg
Value
−100
−100
−4.0
−600
625 5.0
1.5 12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW mW/°C
W mW/°C
°C
Symbol RqJA
RqJC
Max 200
83.3
Unit °C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1) (IC = −1.
MPSL51 Datasheet
