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MPSW13 One Watt Darlington Transistor
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 2
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20 −55 to +150 Unit Vdc Vdc Vdc Adc W mW/°C W mW/°C °C 1 2
EMITTER 1
TO−92 (TO−226) CASE 29−10 STYLE 1 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC
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MPSW13 Datasheet
