MSB92T1G
PNP Silicon General Purpose High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−59 package which is designed for low power surface mount applications.
Features
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO
IC
−300 −300 −5.0 150
Vdc Vdc Vdc mAdc
Rating
Symbol
Max Unit
Power Dissipation (Note 1)
PD 150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg −55X+ 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
MSB92T1G Datasheet
