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MTB3N100E Datasheet High Energy Power Fet

Manufacturer: onsemi

Overview: MTB3N100E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.

Key Features

  • dds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductanc.

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