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MTB9N25E - High Energy Power FET

Features

  • d to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2000 VDS = 0 V Ciss 1600 VGS = 0 V TJ = 25°C C,.

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Datasheet Details

Part number MTB9N25E
Manufacturer ON Semiconductor
File Size 284.10 KB
Description High Energy Power FET
Datasheet download datasheet MTB9N25E Datasheet
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Full PDF Text Transcription

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MTB9N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
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