MTB9N25E Datasheet High Energy Power Fet

Manufacturer: onsemi

Overview: MTB9N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package has the capability of housing a larger die than.

Datasheet Details

Part number	MTB9N25E
Manufacturer	onsemi
File Size	284.10 KB
Description	High Energy Power FET
Datasheet	MTB9N25E-ONSemiconductor.pdf

Key Features

d to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2000 VDS = 0 V Ciss 1600 VGS = 0 V TJ = 25°C C,.

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