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MTBV30P06V - Power MOSFET

Download the MTBV30P06V datasheet PDF. This datasheet also covers the MTB30P06V variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • MTBV30P06V.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MTB30P06V-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
MTB1306 Power MOSFET
MTB15N06V Power Field Effect Transistor
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MTB23P06V Power MOSFET
MTB29N15E Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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