MTD20P03HDL
Features
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete
Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb- Free Packages are Available http://onsemi.
V(BR)DSS 30 V
RDS(on) TYP 90 m W@5.0 V
ID MAX
20 A (Note 1)
P- Channel D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MW)
Gate- Source Voltage
- Continuous
- Non- Repetitive (tpv10 ms)
Drain Current
- Continuous
- Continuous @ 100°C
- Single Pulse (tpv10 ms)
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS VDGR
VGS VGSM
ID ID IDM PD
TJ, Tstg
30 Vdc 30 Vdc
"15 "20
Vdc Vpk
19 12 57
75 0.6 1.75
- 55 to 150
Adc Apk W...
