MTD20P06HDL
Features
- Ultra Low RDS(on), High- Cell Density, HDTMOS
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Avalanche Energy Specified
- Pb- Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MW)
Gate- Source Voltage
- Continuous
- Non- Repetitive (tpv10 ms)
Drain Current
- Continuous
- Continuous @ 100°C
- Single Pulse (tpv10 ms)
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS VDGR
VGS VGSM
ID ID IDM PD
TJ, Tstg
60 Vdc 60 Vdc
"15 "20
Vdc Vpk
15 Adc 9.0 45 Apk
72 W 0.58 W/°C 1.75 W
- 55 to 150
°C
Single Pulse Drain- to- Source Avalanche
Energy
- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 15 Apk, L = 2.7 m H, RG = 25 W)
EAS 300 m J
Thermal Resistance
- Junction- to- Case
- Junction- to- Ambient (Note 1)
- Junction- to- Ambient (Note...
