MTD20P06HDL Description
MTD20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads.
MTD20P06HDL Key Features
- Ultra Low RDS(on), High-Cell Density, HDTMOS
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Avalanche Energy Specified
- Pb-Free Package is Available
- Continuous
- Non-Repetitive (tpv10 ms)
- Continuous
- Continuous @ 100°C
- Single Pulse (tpv10 ms)