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MTD20P06HDL - Power MOSFET

Key Features

  • Ultra Low RDS(on), High.
  • Cell Density, HDTMOS.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Avalanche Energy Specified.
  • Pb.
  • Free Package is Available.

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Full PDF Text Transcription (Reference)

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MTD20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.