MTD6P10E Description
MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for...
MTD6P10E Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb-Free Packages are Available
- Continuous
- Non-repetitive (tp ≤ 10 ms) Drain Current
- Continuous
- Continuous @ 100°C
- Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operati