MTP4N50E - High Energy Power FET

onsemi

Key Features

n current versus re.
applied drain voltage when the source.
drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or half.
bridge PWM DC motor controllers are common.

MTP4N50E high energy power fet by onsemi - Datasheet Preview

Datasheet Details

Part number	MTP4N50E
Manufacturer	onsemi
File Size	252.08 KB
Description	High Energy Power FET
Datasheet	MTP4N50E Datasheet

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Full PDF Text Transcription (Reference)

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MTP4N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.