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MTP4N50E Datasheet High Energy Power Fet

Manufacturer: onsemi

Overview: MTP4N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche.

MTP4N50E datasheet preview

Datasheet Details

Part number	MTP4N50E
Manufacturer	onsemi
File Size	252.08 KB
Description	High Energy Power FET
Datasheet	MTP4N50E-ONSemiconductor.pdf

Key Features

n current versus re.
applied drain voltage when the source.
drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or half.
bridge PWM DC motor controllers are common.

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