MTV32N25E - Power Field Effect Transistor

onsemi

Key Features

power electronic loads are During the turn.
on and turn.
off delay times, gate current is inductive; the data in the figure is taken with a resistive load, not constant. The simplest calculation uses appropriate which approximates an optimally snubbed inductive load. values from the capacitance curves in a standard equation Power MOSFETs may be safely operated into an inductive for voltage change in an RC network. The equations are: load; however, snubbing reduces switching.

MTV32N25E power field effect transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	MTV32N25E
Manufacturer	onsemi
File Size	274.65 KB
Description	Power Field Effect Transistor
Datasheet	MTV32N25E Datasheet

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Full PDF Text Transcription (Reference)

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MTV32N25E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.