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N01L63W3A

Manufacturer: onsemi

N01L63W3A datasheet by onsemi.

N01L63W3A datasheet preview

N01L63W3A Datasheet Details

Part number N01L63W3A
Datasheet N01L63W3A_ONSemiconductor.pdf
File Size 239.26 KB
Manufacturer onsemi
Description Ultra-Low Power Asynchronous CMOS SRAM
N01L63W3A page 2 N01L63W3A page 3

N01L63W3A Overview

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.

N01L63W3A Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
  • Very low standby current 2.0µA at 3.0V (Typical)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory
  • Low voltage data retention Vcc = 1.8V
  • Very fast output enable access time 30ns OE access time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • pact space saving BGA package available

N01L63W3A Applications

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
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