N01L83W2A Datasheet PDF (Ultra-Low Power Asynchronous CMOS SRAM)

General Description

July 2008 - Rev.

Key Features

Single Wide Power Supply Range 2.3 to 3.6 Volts.
Very low standby current 2.0µA at 3.0V (Typical).
Very low operating current 2.0mA at 3.0V and 1µs (Typical).
Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.8V.
Very fast output enable access time 30ns OE access time.
Automati.

Datasheet Details

Part number	N01L83W2A
Manufacturer	onsemi
File Size	216.97 KB
Description	Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N01L83W2A Datasheet

Part number

N01L83W2A

Manufacturer

onsemi

File Size

216.97 KB

Description

Ultra-Low Power Asynchronous CMOS SRAM

Datasheet

N01L83W2A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N01L83W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 8 SRAMs. www.DataSheet4U.