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N01L83W2A Datasheet Ultra-low Power Asynchronous CMOS Sram

Manufacturer: onsemi

Overview: N01L83W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages patible with other standard 128Kb x 8 SRAMs. ..

General Description

s Pin Name A0-A16 WE CE1, CE2 OE I/O0-I/O7 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input O

Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 30ns OE access time.
  • Automati.

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