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N01S818HA Datasheet 1 Mb Ultra-low Power Serial Sram

Manufacturer: onsemi

Overview: N01S818HA 1 Mb Ultra-Low Power Serial SRAM Standard SPI Interface and Multiplex DUAL and QUAD Interface Overview The ON Semiconductor serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed Static Random Access Memory, internally organized as 128 K words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. The devices can operate over a wide temperature range of −40°C to +85°C and are available in a 8-lead TSSOP package.

Key Features

  • Power Supply Range: 1.7 to 2.2 V.
  • Very Low Typical Standby Current < 1 mA.
  • Very Low Operating Current < 10 mA.
  • Simple Serial Interface.
  • Single-bit SPI Access.
  • DUAL-bit and QUAD-bit SPI-like Access.
  • Flexible Operating Modes.
  • Word Mode.
  • Page Mode.
  • Burst Mode (Full Array).
  • High Frequency Read and Write Operation.
  • Clock Frequency 20 MHz.
  • Built-in Write Protection (CS High).

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