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N01S818HA - 1 Mb Ultra-Low Power Serial SRAM

General Description

CS All Chip Select A low level selects the device and a high level puts the device in standby mode.

If CS is brought high during a program cycle, the cycle will complete and then the device will enter standby mode.

When CS is high, SO is in high-Z.

Key Features

  • Power Supply Range: 1.7 to 2.2 V.
  • Very Low Typical Standby Current < 1 mA.
  • Very Low Operating Current < 10 mA.
  • Simple Serial Interface.
  • Single-bit SPI Access.
  • DUAL-bit and QUAD-bit SPI-like Access.
  • Flexible Operating Modes.
  • Word Mode.
  • Page Mode.
  • Burst Mode (Full Array).
  • High Frequency Read and Write Operation.
  • Clock Frequency 20 MHz.
  • Built-in Write Protection (CS High).

📥 Download Datasheet

Datasheet Details

Part number N01S818HA
Manufacturer onsemi
File Size 123.50 KB
Description 1 Mb Ultra-Low Power Serial SRAM
Datasheet download datasheet N01S818HA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N01S818HA 1 Mb Ultra-Low Power Serial SRAM Standard SPI Interface and Multiplex DUAL and QUAD Interface Overview The ON Semiconductor serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed Static Random Access Memory, internally organized as 128 K words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device.