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NCD5705B

Manufacturer: onsemi
NCD5705B datasheet preview

Datasheet Details

Part number NCD5705B
Datasheet NCD5705B-ONSemiconductor.pdf
File Size 657.21 KB
Manufacturer onsemi
Description High Current IGBT Gate Drivers
NCD5705B page 2 NCD5705B page 3

NCD5705B Overview

I/O/x VIN 1 I VREF 2 O FLT 3 O DESAT 4 I VCC 5 x VO 6 O GND 7 x VEE 8 x Description Input signal to control the output. In applications which require galvanic isolation, VIN is generated at the opto output, the pulse transformer secondary or the digital isolator output. VO (VOH/ VOL) signal is in phase with VIN.

NCD5705B Key Features

  • High Current Output (+4/-6 A) at IGBT Miller Plateau Voltages
  • Low Output Impedance for Enhanced IGBT Driving
  • Short Propagation Delay with Accurate Matching
  • Direct Interface to Digital Isolator/Opto-coupler/Pulse Transformer
  • DESAT Protection with Programmable Delay
  • Tight UVLO Thresholds for Bias Flexibility
  • Wide Bias Voltage Range
  • This Device is Pb-Free, Halogen-Free and RoHS pliant
  • Negative Output Voltage for Enhanced IGBT Driving
  • NCV Prefix for Automotive and Other
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NCD5705B Distributor

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