NCD57091B Datasheet | onsemi

Features - High Peak Output Current (+6.5 A/- 6.5 A) - Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn- on (Version A/D/F) - Short Propagation Delays with Accurate Matching - IGBT/MOSFET Gate Clamping during Short Circuit - IGBT/MOSFET Gate Active Pull Down - Tight UVLO Thresholds for Bias Flexibility - Wide Bias Voltage Range including Negative VEE2 (Version B) - 3.3 V, 5 V, and 15 V Logic Input - 5 k Vrms Galvanic Isolation - High Transient Immunity - High Electromagnetic Immunity - NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q100 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Typical Applications - Motor Control - Uninterruptible Power Supplies (UPS) - Automotive Applications - Industrial Power Supplies - Solar Inverters DATA SHEET .onsemi. SOIC8 WB CASE 751EW MARKING DIAGRAM 8 5709zy AWLYYWW 5709zy A WL YY WW G = Specific Device Code z = 0/1 y = A/B/C/D/E/F = Assembly Location = Wafer Lot = Year = Work Week = Pb- Free Package PIN CONNECTIONS See detailed pin connection information on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 23 of this data sheet. © Semiconductor ponents Industries, LLC, 2019 June, 2022 - Rev. 2 Publication Order Number: NCD57090A/D VDD1 IN+ IN-...