NCD57091B Overview
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept plementary inputs and depending on the , offer options such as Active Miller Clamp (version...
NCD57091B Key Features
- High Peak Output Current (+6.5 A/-6.5 A)
- Low Clamp Voltage Drop Eliminates the Need of Negative Power
- Short Propagation Delays with Accurate Matching
- IGBT/MOSFET Gate Clamping during Short Circuit
- IGBT/MOSFET Gate Active Pull Down
- Tight UVLO Thresholds for Bias Flexibility
- Wide Bias Voltage Range including Negative VEE2 (Version B)
- 3.3 V, 5 V, and 15 V Logic Input
- 5 kVrms Galvanic Isolation
- High Transient Immunity