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NCP3418A - Dual Bootstrapped 12V MOSFET Driver

Download the NCP3418A datasheet PDF. This datasheet also covers the NCP3418 variant, as both devices belong to the same dual bootstrapped 12v mosfet driver family and are provided as variant models within a single manufacturer datasheet.

General Description

Description Upper MOSFET Floating Bootstrap Supply.

A capacitor connected between BST and SW pins holds this bootstrap voltage for the high--side MOSFET as it is switched.

The recommended capacitor value is between 100 nF and 1.0 mF.

Key Features

  • Faster Rise and Fall Times.
  • Internal Charge Pump Diode Reduces Cost and Parts Count.
  • Thermal Shutdown for System Protection.
  • Integrated OVP.
  • Internal Pulldown Resistor Suppresses Transient Turn On of Either MOSFET.
  • Anti Cross--Conduction Protection Circuitry.
  • Floating Top Driver Accommodates Boost Voltages of up to 30 V.
  • One Input Signal Controls Both the Upper and Lower Gate Outputs.
  • Output Disable Control Turns O.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NCP3418_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NCP3418A
Manufacturer onsemi
File Size 260.81 KB
Description Dual Bootstrapped 12V MOSFET Driver
Datasheet download datasheet NCP3418A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NCP3418, NCP3418A Dual Bootstrapped 12 V MOSFET Driver with Output Disable The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive the gates of both high--side and low--side power MOSFETs in a synchronous buck converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 20 ns transition time. With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs. The floating top driver design can accommodate VBST voltages as high as 30 V, with transient voltages as high as 35 V.