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NCP51560 - Dual Channel Gate Driver

Datasheet Summary

Features

  • Flexible: Dual Low.
  • Side, Dual High.
  • Side or Half.
  • Bridge Gate Driver.
  • 4.5 A Peak Source, 9 A Peak Sink Output Current Capability.
  • Independent UVLO Protections for Both Output Drivers.
  • Output Supply Voltage from 6.5 V to 30 V with 5.
  • V and 8.
  • V for MOSFET, 13.
  • V and 17.
  • V UVLO for SiC, Thresholds.
  • Common Mode Transient Immunity CMTI > 200 V/ns.
  • Propagation Delay Typical 38 ns with  5 ns Max Delay Matching per Chann.

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Datasheet preview – NCP51560

Datasheet Details

Part number NCP51560
Manufacturer ON Semiconductor
File Size 3.26 MB
Description Dual Channel Gate Driver
Datasheet download datasheet NCP51560 Datasheet
Additional preview pages of the NCP51560 datasheet.

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Full PDF Text Transcription

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5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver NCP51560 The NCP51560 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51560 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively.
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