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NCP58921 Datasheet GaN Power Switch

Manufacturer: onsemi

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Overview

DATA SHEET www.onsemi.com Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mW, 30 A, TQFN26 TQFN26 8x8, 0.8P CASE 518AG NCP58921 The NCP58921 integrates a high−performance, high frequency, driver utilizing state−of−the−art silicon technology and a 650 V, 50 mW Gallium−Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure.

The powerful combination of the Si driver and power GaN HEMT switch provides superior performance compared to monolithic GaN power modules.

The NCP58921 integrated implementation significantly reduces circuit and package parasitics while enables more compact design.

Key Features

  • 650 V 50 mW GaN HEMT with Integrated Driver.
  • 30 ns Typical Driver Propagation Delay.
  • 8x8 mm TQFN26 Package Minimizes Parasitic Inductances.
  • 2.75 mm Creepage Distance for Maximum Reliability.
  • Driver Capability Adjust Enables EMI Optimization under Hard Switching.
  • 6.0 V Driver Clamp Voltage Regulator.
  • TTL Compatible Schmitt Trigger and Rail.
  • to.
  • rail PWM Input.
  • UVLO Protections for VDD and VDDL Supplies.

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