NCP58921 Datasheet GaN Power Switch

Manufacturer: onsemi

NCP58921 gan power switch by onsemi - Datasheet Preview

Datasheet Details

Part number	NCP58921
Manufacturer	onsemi
File Size	550.44 KB
Description	GaN Power Switch
Datasheet	NCP58921 Datasheet

Overview

DATA SHEET www.onsemi.com Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mW, 30 A, TQFN26 TQFN26 8x8, 0.8P CASE 518AG NCP58921 The NCP58921 integrates a high−performance, high frequency, driver utilizing state−of−the−art silicon technology and a 650 V, 50 mW Gallium−Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure.

The powerful combination of the Si driver and power GaN HEMT switch provides superior performance compared to monolithic GaN power modules.

The NCP58921 integrated implementation significantly reduces circuit and package parasitics while enables more compact design.

Key Features

650 V 50 mW GaN HEMT with Integrated Driver.
30 ns Typical Driver Propagation Delay.
8x8 mm TQFN26 Package Minimizes Parasitic Inductances.
2.75 mm Creepage Distance for Maximum Reliability.
Driver Capability Adjust Enables EMI Optimization under Hard Switching.
6.0 V Driver Clamp Voltage Regulator.
TTL Compatible Schmitt Trigger and Rail.
to.
rail PWM Input.
UVLO Protections for VDD and VDDL Supplies.

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