NCP58921 Overview
The powerful bination of the Si driver and power GaN HEMT switch provides superior performance pared to monolithic GaN power modules. The NCP58921 integrated implementation significantly reduces circuit and package parasitics while enables more pact design.
NCP58921 Key Features
- 650 V 50 mW GaN HEMT with Integrated Driver
- 30 ns Typical Driver Propagation Delay
- 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
- 2.75 mm Creepage Distance for Maximum Reliability
- Driver Capability Adjust Enables EMI Optimization under Hard
- 6.0 V Driver Clamp Voltage Regulator
- TTL patible Schmitt Trigger and Rail-to-rail PWM Input
- UVLO Protections for VDD and VDDL Supplies
- Up to 200 V/ns dV/dt Slew Rate Transient Immunity
- 20 V Maximum VDD Ratings