NCP58921
Key Features
- 650 V 50 mW GaN HEMT with Integrated Driver
- 30 ns Typical Driver Propagation Delay
- 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
- 2.75 mm Creepage Distance for Maximum Reliability
- Driver Capability Adjust Enables EMI Optimization under Hard
- 6.0 V Driver Clamp Voltage Regulator
- UVLO Protections for VDD and VDDL Supplies
- Up to 200 V/ns dV/dt Slew Rate Transient Immunity
- 20 V Maximum VDD Ratings
- +5 V LDO Output to Supply Digital Insulators, Current up to 20 mA
Applications
- Power Conversion
