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NCP58922 - Enhanced Mode GaN Power Switch

Description

Pin No.

10 DRAIN GaN Power Switch Drain Power path connection for the GaN Switch DRAIN 19 22, SOURCE 23 26 GaN Power Switch Source Power path connection for the GaN Switch SOURCE 11 VDR Driver clamp regulator decoupling Connect

Features

  • 650 V 78 mW GaN HEMT with Integrated Driver.
  • 30 ns Typical Driver Propagation Delay.
  • 8x8 mm TQFN26 Package Minimizes Parasitic Inductances.
  • 2.75 mm Creepage Distance for Maximum Reliability.
  • Driver Turn.
  • on Process is Adjustable via External Resistor, which Enables EMI Optimization under Hard Switching Conditions.
  • GDS Logic Input, that Switches Driver Strength to Easy Accompanying with QR Flyback Controllers or Tweak EMI Signature.

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Datasheet preview – NCP58922

Datasheet Details

Part number NCP58922
Manufacturer ON Semiconductor
File Size 550.50 KB
Description Enhanced Mode GaN Power Switch
Datasheet download datasheet NCP58922 Datasheet
Additional preview pages of the NCP58922 datasheet.

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Full PDF Text Transcription

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Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mW, 18 A, TQFN26 NCP58922 The NCP58922 integrates a high−performance, high frequency, Silicon (Si) driver and a 650 V, 78 mW Gallium−Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si Driver and power GaN HEMT Switch provides superior performance compared to discrete solution GaN HEMT and external driver. The NCP58922 integrated implementation significantly reduces circuit and package parasitics while enabling more compact design. Features • 650 V 78 mW GaN HEMT with Integrated Driver • 30 ns Typical Driver Propagation Delay • 8x8 mm TQFN26 Package Minimizes Parasitic Inductances • 2.
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