NCP58922 - Enhanced Mode GaN Power Switch

Product Overview

ON Semiconductor

Datasheet Details

Part number	NCP58922
Manufacturer	ON Semiconductor
File Size	550.50 KB
Description	Enhanced Mode GaN Power Switch
Datasheet	NCP58922 Datasheet
Additional preview pages of the NCP58922 datasheet.

Product details

Description

Pin No. 10 DRAIN GaN Power Switch Drain Power path connection for the GaN Switch DRAIN 19 22, SOURCE 23 26 GaN Power Switch Source Power path connection for the GaN Switch SOURCE 11 VDR Driver clamp regulator decoupling Connect driver clamp regulator decoupling capacitor between VDR pin and VDR GND pin.To reduce turn on slew rate is possible connect resistor in series with driver decoupling capacitor.

Features

650 V 78 mW GaN HEMT with Integrated Driver.
30 ns Typical Driver Propagation Delay.
8x8 mm TQFN26 Package Minimizes Parasitic Inductances.
2.75 mm Creepage Distance for Maximum Reliability.
Driver Turn.
on Process is Adjustable via External Resistor, which Enables EMI Optimization under Hard Switching Conditions.
GDS Logic Input, that Switches Driver Strength to Easy Accompanying with QR Flyback Controllers or Tweak EMI Signature.

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Published: Apr 14, 2025 |