NCP58922 Datasheet Enhanced Mode GaN Power Switch

Manufacturer: onsemi

NCP58922 enhanced mode gan power switch by onsemi - Datasheet Preview

Datasheet Details

Part number	NCP58922
Manufacturer	onsemi
File Size	550.50 KB
Description	Enhanced Mode GaN Power Switch
Datasheet	NCP58922 Datasheet

Overview

Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mW, 18 A, TQFN26 NCP58922 The NCP58922 integrates a high−performance, high frequency, Silicon (Si) driver and a 650 V, 78 mW Gallium−Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure.

The powerful combination of the Si Driver and power GaN HEMT Switch provides superior performance compared to discrete solution GaN HEMT and external driver.

The NCP58922 integrated implementation significantly reduces circuit and package parasitics while enabling more compact design.

Key Features

650 V 78 mW GaN HEMT with Integrated Driver.
30 ns Typical Driver Propagation Delay.
8x8 mm TQFN26 Package Minimizes Parasitic Inductances.
2.75 mm Creepage Distance for Maximum Reliability.
Driver Turn.
on Process is Adjustable via External Resistor, which Enables EMI Optimization under Hard Switching Conditions.
GDS Logic Input, that Switches Driver Strength to Easy Accompanying with QR Flyback Controllers or Tweak EMI Signature.

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