NCP58922
Key Features
- 650 V 78 mW GaN HEMT with Integrated Driver
- 30 ns Typical Driver Propagation Delay
- 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
- 2.75 mm Creepage Distance for Maximum Reliability
- Driver Turn−on Process is Adjustable via External Resistor, which
- GDS Logic Input, that Switches Driver Strength to Easy
- 6.0 V Driver Clamp Voltage Regulator
- UVLO Protections for VDD and VDR Supplies
- Up to 200 V/ns dV/dt Slew Rate Transient Immunity
- 20 V Maximum VDD Ratings
Applications
- Power Conversion
