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NCP81075 - Dual MOSFET

General Description

Pin No.

Pin No.

5,6 Symbol VDD HB HO HS HI LI VSS LO NC NCP81075 Description Positive Supply to the Lower Gate Driver High Side Bootstrap Supply High Side Output High Side Source High Side Input Low

Key Features

  • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration.
  • Floating Top Driver Accommodates Boost Voltage up to 180 V.
  • Switching Frequency up to 1 MHz.
  • 20 ns Propagation Delay Times.
  • 4 A Sink, 4 A Source Output Currents.
  • 8 ns Rise / 7 ns Fall Times with 1000 pF Load.
  • UVLO Protection.
  • Specified from.
  • 40°C to 140°C.
  • Offered in SOIC.
  • 8 (D), DFN8 (MN), WDFN10 (MT) Packages.
  • These Devi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual MOSFET Gate Driver, High Performance NCP81075 Introduction The NCP81075 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81075 uses an on−chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB voltage as high as 180 V. The low−side and high−side are independently controlled and match to 4 ns between the turn−on and turn−off of each other. Independent Under−Voltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below a specific threshold.