NCP81075 Datasheet | onsemi

Dual MOSFET Gate Driver, High Performance Introduction The NCP81075 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81075 uses an on- chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can acmodate HB voltage as high as 180 V. The low- side and high- side are independently controlled and match to 4 ns between the turn- on and turn- off of each other. Independent Under- Voltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below a specific threshold. Features - Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration - Floating Top Driver Acmodates Boost Voltage up to 180 V - Switching Frequency up to 1 MHz - 20 ns Propagation Delay Times - 4 A Sink, 4 A Source Output Currents - 8 ns Rise / 7 ns Fall Times with 1000 p F Load - UVLO Protection - Specified from - 40°C to 140°C - Offered in SOIC- 8 (D), DFN8 (MN), WDFN10 (MT) Packages - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Applications - Tele and Data - Isolated Non- Isolated Power Supply Architectures - Class D Audio Amplifiers - Two Switch and Active Clamp Forward Converters Simplified Application Diagram PWM CONTROLLER VIN VOUT DATA SHEET .onsemi. 8 ÇÇÇÇ SOIC- 8 NB DFN8 WDFN10 CASE 751- 07 CASE 506CY CASE...