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NDBA170N06A - N-Channel Power MOSFET

Key Features

  • On-resistance RDS(on)=2.5mΩ(typ. ).
  • Input Capacitance Ciss=15800pF(typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C VGSS ID IDL IDP PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avala.

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Datasheet Details

Part number NDBA170N06A
Manufacturer onsemi
File Size 424.82 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NDBA170N06A Datasheet

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Ordering number : ENA2250 NDBA170N06A N-Channel Power MOSFET 60V, 170A, 3.3mΩ, TO-263 Features • On-resistance RDS(on)=2.5mΩ(typ.) • Input Capacitance Ciss=15800pF(typ.