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NDF06N60Z
Power MOSFET, N-Channel, 600 V, 1.2 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Continuous Drain Current, RqJC (Note 1) Continuous Drain Current
TA = 100°C, RqJC (Note 1)
VDSS
600
V
ID
7.1
A
ID
4.5
A
Pulsed Drain Current, VGS @ 10 V
IDM
28
A
Power Dissipation, RqJC
PD
Gate−to−Source Voltage
VGS
Single Pulse Avalanche Energy, L = 6.3 mH,
EAS
ID = 6.0 A
35
W
±30
V
113
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec., R.H.
NDF06N60Z Datasheet
