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NDF06N62Z
N-Channel Power MOSFET 620 V, 1.2 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF06N62Z Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC (Note 1) Continuous Drain Current
RqJC, TA = 100°C (Note 1)
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 6.0 A
VDSS ID ID
IDM
PD VGS EAS
620
V
6.0
A
3.8
A
20
A
31
W
±30
V
113
mJ
ESD (HBM) (JESD 22−A114)
Vesd
3000
V
RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
VISO
4500
V
dv/dt
4.
NDF06N62Z Datasheet
