NDF10N60Z Datasheet | onsemi

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features - - - - - - - - - - Low ON Resistance Low Gate Charge Zener Diode- protected Gate 100% Avalanche Tested ROHS pliant This is a Pb- Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain- to- Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate- to- Source Voltage Single Pulse Avalanche Energy, L = 6.0 m H, ID = 10 A ESD (HBM) (JESD 22- 114- B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 ±30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V m J http://onsemi. VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65 Ω Applications N- Channel D...