NDF11N50Z Datasheet | onsemi

Data Sheet.in NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features - - - - Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb- Free and are Ro HS pliant VDSS 500 V Rating Drain- to- Source Voltage Continuous Drain Current, Rq JC Continuous Drain Current TA = 100°C, Rq JC Pulsed Drain Current, VGS @ 10 V Power Dissipation, Rq JC (Note 1) Gate- to- Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22- A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 10.5 (Note 2) 6.7 (Note 2) 42 (Note 2) 36 ±30 190 4000 NDF11N50Z NDP11N50Z Unit V 10.5 6.7 42 145 A A A http://onsemi. RDS(ON) (MAX) @ 4.5 A 0.52...