NDS9948
Overview
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).
- -2.3 A, -60 V RDS(ON) = 250 mΩ @ VGS = -10 V RDS(ON) = 500 mΩ @ VGS = -4.5 V
- Low gate charge (9nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
