Datasheet Summary
Dual 60V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V
- 20V).
Applications
- Power management
- Load switch
- Battery protection
Features
- - 2.3 A,
- 60 V
RDS(ON) = 250 mΩ @ VGS =
- 10 V RDS(ON) = 500 mΩ @ VGS =
- 4.5 V
- Low gate charge (9nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
DD1 DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1...
