NDS9948 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such...
NDS9948 Key Features
- 2.3A, -60V. RDS(ON) = 0.25Ω @ VGS = -10V. High density cell design for low RDS(ON). High power and current handling capa