Datasheet4U Logo Datasheet4U.com

NDS9948 Datasheet Dual P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: February 1996 NDS9948 Dual P-Channel Enhancement Mode Field Effect.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes.

These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • -2.3A, -60V. RDS(ON) = 0.25Ω @ VGS = -10V. High density cell design for low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ______________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS9948 -60 ± 20 (Note 1a) Units V V A - Conti.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo NDS9948 60V Dual P-Channel MOSFET ON Semiconductor
VBsemi Logo NDS9948-NL Dual P-Channel MOSFET VBsemi

More Datasheets from Fairchild (now onsemi)

Part Number Description
NDS9945 Dual N-Channel MOSFET
NDS9947 Dual P-Channel MOSFET
NDS9925A Dual N-Channel MOSFET
NDS9933A Dual P-Channel MOSFET
NDS9936 Dual N-Channel MOSFET
NDS9952A Dual N&P-Channel MOSFET
NDS9953A Dual P-Channel MOSFET
NDS9955 Dual N-Channel MOSFET
NDS9956A Dual N-Channel MOSFET
NDS9957 Dual N-Channel MOSFET

NDS9948 Distributor