NDS9948
Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
- 3A, -60V. RDS(ON) = 0.25Ω @ VGS = -10V. High density cell design for low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. 5 4 3 2 1 6 7 8
