Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- -2.3A, -60V. RDS(ON) = 0.25Ω @ VGS = -10V. High density cell design for low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ______________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25°C unless otherwise noted
NDS9948 -60 ± 20
(Note 1a)
Units V V A
- Conti.
NDS9948 Datasheet
