Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- -3.5A, -20V. RDS(ON) = 0.1Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25°C unless otherwise noted
NDS9947 -20 ± 20 TA = 25°C TA = 25°C
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NDS9947 Datasheet
