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NDSH10120C-F155 - SiC Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175C.
  • Avalanche Rated 49 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • These Devices are Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – NDSH10120C-F155

Datasheet Details

Part number NDSH10120C-F155
Manufacturer ON Semiconductor
File Size 288.85 KB
Description SiC Schottky Diode
Datasheet download datasheet NDSH10120C-F155 Datasheet
Additional preview pages of the NDSH10120C-F155 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L NDSH10120C-F155 1. Cathode 2. Anode Schottky Diode Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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