NDSH10120C-F155 Datasheet | onsemi

DATA SHEET .onsemi. Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L 1. Cathode 2. Anode Schottky Diode Description Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175C -...