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NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET 400 V, 3.4 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current Steady State, TC = 25°C (Note 1)
VDSS VGS ID
400 ±30 2.1 0.5
V V A
Continuous Drain Current Steady State, TC = 100°C (Note 1)
ID 1.3 0.3 A
Power Dissipation Steady State, TC = 25°C
PD 37 2.0 W
Pulsed Drain Current
Continuous Source Current (Body Diode)
IDM 8.0 7.2 A IS 2.1 0.
NDT03N40Z Datasheet
