NDT2955 - P-Channel Enhancement Mode Field Effect Transistor

onsemi

General Description

This 60 V P

voltage Trench process.

It has been optimized for power management plications.

Key Features

2.5 A,.
60 V.
RDS(ON) = 300 mW @ VGS =.
10 V.
RDS(ON) = 500 mW @ VGS =.
4.5 V.
High Density Cell Design for Extremely Low RDS(ON).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
This is a Pb.
Free Device.

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NDT2955 p-channel enhancement mode field effect transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	NDT2955
Manufacturer	onsemi
File Size	193.59 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT2955 Datasheet

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Full PDF Text Transcription (Reference)

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P-Channel Enhancement Mode Field Effect Transistor NDT2955 General Description This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications. Features • −2.5 A, −60 V ♦ RDS(ON) = 300 mW @ VGS = −10 V ♦ RDS(ON) = 500 mW @ VGS = −4.5 V • High Density Cell Design for Extremely Low RDS(ON). • High Power and Current Handling Capability in a Widely Used Surface Mount Package • This is a Pb−Free Device Applications • DC/DC Converter • Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current − Continuous (Note 1a) −60 V ±20 V A −2.5 − Pulsed −15 PD Maximum Power Dissipation (Note 1a) W 3.