NDT2955 Overview
Description
This 60 V P-Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications.
Key Features
- 2.5 A, -60 V
- RDS(ON) = 300 mW @ VGS = -10 V
- RDS(ON) = 500 mW @ VGS = -4.5 V
- High Density Cell Design for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- This is a Pb-Free Device
