NDT2955 Description
This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications.
NDT2955 Key Features
- 2.5 A, -60 V
- RDS(ON) = 300 mW @ VGS = -10 V
- RDS(ON) = 500 mW @ VGS = -4.5 V
- High Density Cell Design for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used
- This is a Pb-Free Device