NDT2955 - P-Channel MOSFET

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Fairchild

Part number	NDT2955
Manufacturer	Fairchild
File Size	92.03 KB
Description	P-Channel MOSFET
Datasheet	NDT2955 Datasheet
Additional preview pages of the NDT2955 datasheet.

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted.

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Published: May 12, 2005 |