Kexin Electronics NDT2955
P-Channel MOSFET
FEATURES
● VDS (V) =-60V● ID =-2.5 A (VGS =-10V)
● RDS(ON) < 300mΩ (VGS =-10V)
● RDS(ON) < 500mΩ (VGS =-4.5V) D G D S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current (Note.1) Power Dissipation (Note.2) (Note.3) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.1: 42°C/W when mounted on a 1in2 pad of 2 oz copper Note.2: 95°C/W when mounted on a .0066 in2 pad of 2 oz copper Note.3: 110°C/W when mounted on a minimum pad. Rating -60 ±20 -2.5 -15 3 1.3 1.1 42 12 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel MOSFET NDT2955 (KDT2955)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Dr...