| Part Number | NDT2955 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This 60 V P−Channel MOSFET is produced using onsemi’s high
voltage Trench process. It has been optimized for power management plications.
Features
• −2.5 A, −60 V
♦ RDS(ON) = 300 mW @ VGS = −10 V ♦ RD.
* *2.5 A, *60 V * RDS(ON) = 300 mW @ VGS = *10 V * RDS(ON) = 500 mW @ VGS = *4.5 V * High Density Cell Design for Extremely Low RDS(ON). * High Power and Current Handling Capability in a Widely Used Surface Mount Package * This is a Pb *Free Device Applications * DC/DC Converter * Power Management A. |
NDT2955 Datasheet and Specifications PDF
The NDT2955 is a P-Channel Enhancement Mode Field Effect Transistor.
Key Specifications
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Height | 1.8 mm |
| Length | 6.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | NDT2955 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
MOSFET
P-Channel MOSFET NDT2955 (KDT2955)
■ Features
● VDS (V) =-60V
● ID =-2.5 A (VGS =-10V)
● RDS(ON) ＜ 300mΩ (VGS =-10V)
● RDS(ON) ＜ 500mΩ (VGS =-4.5V)
D
G
D
S
SOT-223
6.50±0..
* VDS (V) =-60V * ID =-2.5 A (VGS =-10V) * RDS(ON) ＜ 300mΩ (VGS =-10V) * RDS(ON) ＜ 500mΩ (VGS =-4.5V) D G D S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain * A. |
| Part Number | NDT2955 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailore. -2.5A, -60V. RDS(ON) = 0.3Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G . |
| Part Number | NDT2955 Datasheet |
|---|---|
| Description | P-Channel 60V MOSFET |
| Manufacturer | VBsemi |
| Overview |
NDT2955-VB
NDT2955-VB Datasheet P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.055 at VGS = - 10 V
0.065 at VGS = - 4.5 V
ID (A)a - 7.0 - 6.0
Qg (Typ.) 30 nC
FEATURES.
* Trench Power MOSFET * 100 % UIS Tested APPLICATIONS * Load Switch SOT-223 D S D G S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (T. |