NDUL03N150C - N-Channel Power MOSFET

Features

ON-resistance RDS(on)=8Ω (typ. ).
Input capacitance Ciss=650pF (typ. ).
10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=50V, L=10mH, IAV=2.5A (Fig.1).

ON Semiconductor

Datasheet Details

Part number	NDUL03N150C
Manufacturer	ON Semiconductor
File Size	180.34 KB
Description	N-Channel Power MOSFET
Datasheet	NDUL03N150C Datasheet
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Full PDF Text Transcription

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Ordering number : ENA2218 NDUL03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-3PF-3L http://onsemi.com Features • ON-resistance RDS(on)=8Ω (typ.) • Input capacitance Ciss=650pF (typ.) • 10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=50V, L=10mH, IAV=2.5A (Fig.1) *2 L≤10mH, single pulse Conditions Limited only maximum temperature Tch=150°C PW≤10μs, duty cycle≤1% Tc=25°C TO-3PF-3L Ratings 1500 ±30 2.5 5 3.0 50 150 --55 to +150 34 2.

Published: Jan 25, 2016 |