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NDUL03N150C - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)=8Ω (typ. ).
  • Input capacitance Ciss=650pF (typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=50V, L=10mH, IAV=2.5A (Fig.1).

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Datasheet Details

Part number NDUL03N150C
Manufacturer onsemi
File Size 180.34 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NDUL03N150C Datasheet

Full PDF Text Transcription for NDUL03N150C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NDUL03N150C. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA2218 NDUL03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-3PF-3L http://onsemi.com Features • ON-resistance RDS(on)=8Ω (typ.) • Input capacitanc...

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semi.com Features • ON-resistance RDS(on)=8Ω (typ.) • Input capacitance Ciss=650pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=50V, L=10mH, IAV=2.5A (Fig.1) *2 L≤10mH, single pulse Conditions Limited only maximum temperature Tch=150°C PW≤10μs, duty cycle≤1% Tc=25°C TO-3PF-3L Ratings 1500 ±30 2.5 5 3.0 50 150 --55 to +150 34

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