100% Avalanche Tested
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW 10s, duty cycle 1%
Symbol VDSS VGSS ID IDL
IDP
Power Dissipation Junction Temperature
Tc=25C
PD Tj
Storage Temperature
Tstg
Source Current (Body Diode) Av.
Full PDF Text Transcription for NDUL09N150C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NDUL09N150C. For precise diagrams, and layout, please refer to the original PDF.
NDUL09N150C Power MOSFET 1500V, 3.0Ω, 9A, N-Channel www.onsemi.com Features Low On-Resistance Ultra High Voltage Pb-Free and RoHS Compliance High Speed Switching ...
View more extracted text
tra High Voltage Pb-Free and RoHS Compliance High Speed Switching 100% Avalanche Tested Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW 10s, duty cycle 1% Symbol VDSS VGSS ID IDL IDP Power Dissipation Junction Temperature Tc=25C PD Tj Storage Temperature Tstg Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3 mm from case for 10 seconds IS EAS TL Value 1500 ±30 9 6 18 3.