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NDUL09N150C
Power MOSFET 1500V, 3.0Ω, 9A, N-Channel
www.onsemi.com
Features
Low On-Resistance Ultra High Voltage Pb-Free and RoHS Compliance
High Speed Switching 100% Avalanche Tested
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW 10s, duty cycle 1%
Symbol VDSS VGSS ID IDL
IDP
Power Dissipation Junction Temperature
Tc=25C
PD Tj
Storage Temperature
Tstg
Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3 mm from case for 10 seconds
IS EAS
TL
Value 1500 ±30 9 6
18
3.