NE521 Datasheet | onsemi

NE521 High- Speed Dual- Differential parator/Sense Amp Features - - - - TTL-patible Strobes and Outputs Large mon-Mode Input Voltage Range Operates from Standard Supply Voltages Pb- Free Packages are Available http://onsemi. MARKING DIAGRAMS 14 1 SOIC- 14 D SUFFIX CASE 751A 1 NE521G AWLYWW Applications - MOS Memory Sense Amp - A-to-D Conversion - High-Speed Line Receiver MAXIMUM RATINGS Rating Supply Voltage Positive Negative Differential Input Voltage Input Voltage mon Mode Strobe/Gate Maximum Power Dissipation (Note 1) TA = 25°C (Still- Air) N Package D Package Thermal Resistance, Junction- to- Ambient N Package D Package Operating Temperature Range Storage Temperature Range Operating Junction Temperature Lead Soldering Temperature (10 sec max) Symbol V+ V- VIDR VIN Value +7.0 - 7.0 "6.0 Unit V 14 1 PDIP- 14 N SUFFIX CASE 646 1 NE521N AWLYYWWG .. "5.0 +5.25 PD 1420 1040 Rq JA 100 145 0 to 70 - 65 to +150 150 +230 m W A WL Y, YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb- Free Package °C/W PIN CONNECTIONS D, N Packages TA Tstg TJ Tsld °C °C °C °C INPUT 1A INPUT 1B NC OUTPUT 1Y STROBE 1G STROBE S GROUND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 V+ V- INPUT 2A INPUT 2B NC OUTPUT 2Y STROBE 2G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Derate above 25°C at the following rates: N package at 10 m W/°C D package at 6.9 m...